ME3205F-G, ME3205F Datasheet - Matsuki

ME3205F-G N-Channel MOSFET

The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME3205F-G Features

* RDS(ON)≦6mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green product-Haloge

ME3205F-Matsuki.pdf

ME3205F-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME3205F-G, ME3205F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME3205F-G, ME3205F

Manufacturer:

Matsuki

File Size:

954.77 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME3205F-G, ME3205F.
Please refer to the document for exact specifications by model.

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ME3205F-G ME3205F N-Channel MOSFET Matsuki

ME3205F-G Distributor