ME3205F-G Datasheet - Matsuki

ME3205F-G N-Channel MOSFET

The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME3205F-G Features

* RDS(ON)≦6mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green product-Haloge

ME3205F-G Datasheet (954.77 KB)