ME3205F-G - N-Channel MOSFET
The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME3205F-G Features
* RDS(ON)≦6mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management
* DC/DC Converter
* TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green product-Haloge
