ME3205T Datasheet - Matsuki

ME3205T N-Channel MOSFET

The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME3205T Features

* RDS(ON)≦6.5mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter PIN CONFIGURATION (TO-220) Top View

* TheOrdering Information: ME3205T (Pb-free

ME3205T-Matsuki.pdf