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ME3205T-G Datasheet - Matsuki

N-Channel MOSFET

ME3205T-G Features

* RDS(ON)≦6.5mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter PIN CONFIGURATION (TO-220) Top View

* TheOrdering Information: ME3205T (Pb-free

ME3205T-G General Description

The ME3205T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME3205T-G Datasheet (933.39 KB)

Preview of ME3205T-G PDF

Datasheet Details

Part number:

ME3205T-G

Manufacturer:

Matsuki

File Size:

933.39 KB

Description:

N-channel mosfet.

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ME3205T-G N-Channel MOSFET Matsuki

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