ME4435-G Datasheet (Matsuki) - P-Channel 30-V (D-S) MOSFET

ME4435-G, P-Channel 30-V (D-S) MOSFET

The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME4435-G Features

* RDS(ON)≦20mΩ@VGS=-10V

* RDS(ON)≦35mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/D