ME4436 Datasheet | Matsuki

DESCRIPTION The ME4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES - RDS(ON)≦33mΩ@VGS=10V - RDS(ON)≦40mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability APPLICATIONS - Power Management - DC/DC Converter - LCD TV & Monitor Display inverter - CCFL inverter CONFIGURATION (SOP-8) Top View e Ordering Information: ME4436 (Pb-free) ME4436-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation L=0.1m H TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS IAS EAS PD TJ RθJA RθJC 10 secs Steady State ±20 Unit 7.1 5.7 30 2 15 12 2.7 1.7 -55 to 150 46 43 5.6 4.5 A m J 1.6 1 76 W ℃ ℃/W Operating Junction & Storage Temperature Range Thermal Resistance-Junction to Ambient - Thermal Resistance-Junction to Case - - The device mounted on 1in2 FR4 board with 2 oz copper Jan, 2009-Ver1.1 Free Datasheet http://.n Datasheet. ME4436(-G) N-Channel 60V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC VDS VGS(th) IGSS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=60V, VGS=0V IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Diode...