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ME4456-G

N-Channel 40-V (D-S) MOSFET

ME4456-G Features

* RDS(ON)≦24mΩ@VGS=10V

* RDS(ON)≦39mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

* DC/DC Converter

* Load Switc

ME4456-G General Description

The ME4456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME4456-G Datasheet (1.22 MB)

Preview of ME4456-G PDF

Datasheet Details

Part number:

ME4456-G

Manufacturer:

Matsuki

File Size:

1.22 MB

Description:

N-channel 40-v (d-s) mosfet.

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TAGS

ME4456-G N-Channel 40-V D-S MOSFET Matsuki

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