ME4626-G, ME4626 Datasheet - Matsuki

ME4626-G N-Channel MOSFET

The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME4626-G Features

* RDS(ON)≦3.5mΩ@VGS=10V

* RDS(ON)≦4.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

* DC/DC Converter

* Load Swi

ME4626-Matsuki.pdf

ME4626-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME4626-G, ME4626. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME4626-G, ME4626

Manufacturer:

Matsuki

File Size:

809.53 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4626-G, ME4626.
Please refer to the document for exact specifications by model.

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TAGS

ME4626-G ME4626 N-Channel MOSFET Matsuki

ME4626-G Distributor