The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state resistance.
These devices are particularly suited for low voltage application such as cellular pho
ME4920-G Features
* RDS(ON)≦35 mΩ@VGS=10V
* RDS(ON)≦45 mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC
Datasheet Details
ME4920-G, ME4920
Matsuki
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Dual n-channel mosfet.
This datasheet PDF includes multiple part numbers: ME4920-G, ME4920.
Please refer to the document for exact specifications by model.
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