ME4952 Datasheet (Matsuki) - Dual N-Channel MOSFET

ME4952, Dual N-Channel MOSFET

The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application suc

ME4952 Features

* RDS(ON)≦270mΩ@VGS=10V

* RDS(ON)≦295mΩ@VGS=6.0V

* RDS(ON)≦350mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batte