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ME4952

Dual N-Channel MOSFET

ME4952 Features

* RDS(ON)≦270mΩ@VGS=10V

* RDS(ON)≦295mΩ@VGS=6.0V

* RDS(ON)≦350mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batte

ME4952 General Description

The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME4952 Datasheet (1.34 MB)

Preview of ME4952 PDF

Datasheet Details

Part number:

ME4952

Manufacturer:

Matsuki

File Size:

1.34 MB

Description:

Dual n-channel mosfet.

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TAGS

ME4952 Dual N-Channel MOSFET Matsuki

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