Datasheet4U Logo Datasheet4U.com

ME50N10 N-Channel MOSFET

ME50N10 Description

N- Channel 100-V (D-S) MOSFET GENERAL .
The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME50N10 Features

* RDS(ON)≦17mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME50N10 Applications

* Power Management
* DC/DC Converter
* Load Switch Ordering Information: ME50N10 (Pb-free) ME50N10-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drai

📥 Download Datasheet

Preview of ME50N10 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ME50N10
Manufacturer
Matsuki
File Size
744.38 KB
Datasheet
ME50N10-Matsuki.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • ME500810 - Three-Phase Diode Bridge Modules (100 Amperes/800 Volts) (Powerex Powers)
  • ME501206 - Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501210 - Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501606 - Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501610 - Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME54BS01 - Bluetooth LE Module (Minewsemi)

📌 All Tags

N-Channel MOSFET Matsuki
Matsuki ME50N10-like datasheet