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ME50N10-G, ME50N10 N-Channel MOSFET

ME50N10-G Description

N- Channel 100-V (D-S) MOSFET GENERAL .
The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME50N10-G Features

* RDS(ON)≦17mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME50N10-G Applications

* Power Management
* DC/DC Converter
* Load Switch Ordering Information: ME50N10 (Pb-free) ME50N10-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drai

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME50N10-G, ME50N10. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME50N10-G, ME50N10
Manufacturer
Matsuki
File Size
744.38 KB
Datasheet
ME50N10-Matsuki.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME50N10-G, ME50N10.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Matsuki
Matsuki ME50N10-G-like datasheet