Datasheet4U Logo Datasheet4U.com

ME50N10AT-G, ME50N10AT - N-Channel MOSFET

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME50N10AT-G, ME50N10AT. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number ME50N10AT-G, ME50N10AT
Manufacturer Matsuki
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet ME50N10AT-Matsuki.pdf
Note This datasheet PDF includes multiple part numbers: ME50N10AT-G, ME50N10AT.
Please refer to the document for exact specifications by model.

ME50N10AT-G Product details

Description

The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

📁 ME50N10AT-G Similar Datasheet

  • ME500810 - Three-Phase Diode Bridge Modules (100 Amperes/800 Volts) (Powerex Powers)
  • ME501206 - Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501210 - Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501606 - Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501610 - Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME54BS01 - Bluetooth LE Module (Minewsemi)
Other Datasheets by Matsuki
Published: |