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ME50N10AT-G, ME50N10AT N-Channel MOSFET

ME50N10AT-G Description

ME50N10AT /ME50N10AT-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME50N10AT-G Features

* RDS(ON)≦40mΩ@VGS=10V
* RDS(ON)≦60mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME50N10AT-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-220) Top View
* The Ordering Information: ME50N10AT /ME50N10AT-G (Green product-Halogen free)

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME50N10AT-G, ME50N10AT. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME50N10AT-G, ME50N10AT
Manufacturer
Matsuki
File Size
0.96 MB
Datasheet
ME50N10AT-Matsuki.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME50N10AT-G, ME50N10AT.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Matsuki
Matsuki ME50N10AT-G-like datasheet