ME50N10AT-G, ME50N10AT Datasheet - Matsuki

ME50N10AT-G N-Channel MOSFET

The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME50N10AT-G Features

* RDS(ON)≦40mΩ@VGS=10V

* RDS(ON)≦60mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

ME50N10AT-Matsuki.pdf

ME50N10AT-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME50N10AT-G, ME50N10AT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME50N10AT-G, ME50N10AT

Manufacturer:

Matsuki

File Size:

0.96 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME50N10AT-G, ME50N10AT.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME50N10AT N-Channel MOSFET (Matsuki)

ME50N10 N-Channel MOSFET (Matsuki)

ME50N10-G N-Channel MOSFET (Matsuki)

ME50N10F N-Channel MOSFET (Matsuki)

ME50N10F-G N-Channel MOSFET (Matsuki)

ME50N10T N-Channel MOSFET (Matsuki)

ME50N10T-G N-Channel MOSFET (Matsuki)

ME50N02 N-Channel MOSFET (Matsuki)

TAGS

ME50N10AT-G ME50N10AT N-Channel MOSFET Matsuki

ME50N10AT-G Distributor