Datasheet Details
Part number:
ME6980ED-G, ME6980ED
Manufacturer:
Matsuki
File Size:
1.14 MB
Description:
Dual n-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME6980ED-G, ME6980ED.
Please refer to the document for exact specifications by model.
ME6980ED-G, ME6980ED, Dual N-Channel MOSFET
The ME6980ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application s
ME6980ED-G Features
* RDS(ON)≦14.5mΩ@VGS=4.5V
* RDS(ON)≦15mΩ@VGS=4.0V
* RDS(ON)≦17mΩ@VGS=3.1V
* RDS(ON)≦20mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Po
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