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ME6986ED Dual N-Channel MOSFET

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Description

ME6986ED/ME6986ED-G Dual N-Channel 20V(D-S) MOSFET, ESD Protection GENERAL .
The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
ME6986ED
Manufacturer
Matsuki
File Size
795.29 KB
Datasheet
ME6986ED-Matsuki.pdf
Description
Dual N-Channel MOSFET

Features

* RDS(ON)≦13.5mΩ@VGS=4.5V
* RDS(ON)≦18mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC Ordering Information: ME6986ED (Pb-free) ME6986

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