ME6986ED Datasheet (Matsuki) - Dual N-Channel MOSFET

ME6986ED, Dual N-Channel MOSFET

The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application s

ME6986ED Features

* RDS(ON)≦13.5mΩ@VGS=4.5V

* RDS(ON)≦18mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

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