ME6987-G Datasheet (Matsuki) - Dual P-Channel MOSFET

ME6987-G, Dual P-Channel MOSFET

The ME6987-G is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application s

ME6987-G Features

* RDS(ON)≦31mΩ@VGS=-4.5V

* RDS(ON)≦43mΩ@VGS=-2.5V

* RDS(ON)≦63mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batt