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ME6987-G Datasheet - Matsuki

Dual P-Channel MOSFET

ME6987-G Features

* RDS(ON)≦31mΩ@VGS=-4.5V

* RDS(ON)≦43mΩ@VGS=-2.5V

* RDS(ON)≦63mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batt

ME6987-G General Description

The ME6987-G is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application s.

ME6987-G Datasheet (913.80 KB)

Preview of ME6987-G PDF

Datasheet Details

Part number:

ME6987-G

Manufacturer:

Matsuki

File Size:

913.80 KB

Description:

Dual p-channel mosfet.

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ME6987-G Dual P-Channel MOSFET Matsuki

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