Datasheet4U Logo Datasheet4U.com

ME7804AS-G

N-Channel MOSFET

ME7804AS-G Features

* RDS(ON) ≦18 mΩ@VGS=10V

* RDS(ON) ≦30 mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/

ME7804AS-G General Description

The ME7804AS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME7804AS-G Datasheet (1.27 MB)

Preview of ME7804AS-G PDF

Datasheet Details

Part number:

ME7804AS-G

Manufacturer:

Matsuki

File Size:

1.27 MB

Description:

N-channel mosfet.

📁 Related Datasheet

ME7804-G N-Channel MOSFET (Matsuki)

ME7804S-G N-Channel MOSFET (Matsuki)

ME7802-G N-Channel MOSFET (Matsuki)

ME7802S-G N-Channel MOSFET (Matsuki)

ME7806S-G N-Channel MOSFET (Matsuki)

ME7809 P-Channel MOSFET (Matsuki)

ME7809-G P-Channel MOSFET (Matsuki)

ME7812S-G N-Channel MOSFET (Matsuki)

ME7814S N-Channel MOSFET (Matsuki)

ME7814S-G N-Channel MOSFET (Matsuki)

TAGS

ME7804AS-G N-Channel MOSFET Matsuki

Image Gallery

ME7804AS-G Datasheet Preview Page 2 ME7804AS-G Datasheet Preview Page 3

ME7804AS-G Distributor