Datasheet4U Logo Datasheet4U.com

ME7802S-G

N-Channel MOSFET

ME7802S-G Features

* RDS(ON) mΩ@VGS=10V RDS(ON) mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Portable Equipment Battery Powered System DC/DC Converter Load Switch Ordering Information: ME7802S-G (Green product-Halog

ME7802S-G General Description

The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME7802S-G Datasheet (714.14 KB)

Preview of ME7802S-G PDF

Datasheet Details

Part number:

ME7802S-G

Manufacturer:

Matsuki

File Size:

714.14 KB

Description:

N-channel mosfet.

📁 Related Datasheet

ME7802-G N-Channel MOSFET (Matsuki)

ME7804-G N-Channel MOSFET (Matsuki)

ME7804AS-G N-Channel MOSFET (Matsuki)

ME7804S-G N-Channel MOSFET (Matsuki)

ME7806S-G N-Channel MOSFET (Matsuki)

ME7809 P-Channel MOSFET (Matsuki)

ME7809-G P-Channel MOSFET (Matsuki)

ME7812S-G N-Channel MOSFET (Matsuki)

ME7814S N-Channel MOSFET (Matsuki)

ME7814S-G N-Channel MOSFET (Matsuki)

TAGS

ME7802S-G N-Channel MOSFET Matsuki

Image Gallery

ME7802S-G Datasheet Preview Page 2 ME7802S-G Datasheet Preview Page 3

ME7802S-G Distributor