ME7802S-G Datasheet (Matsuki)

ME7802S-G, N-Channel MOSFET

The ME7802S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME7802S-G Features

* RDS(ON) mΩ@VGS=10V RDS(ON) mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Portable Equipment Battery Powered System DC/DC Converter Load Switch Ordering Information: ME7802S-G (Green product-Halog