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ME7806S-G

N-Channel MOSFET

ME7806S-G Features

* RDS(ON) ≦8.5mΩ@VGS=10V

* RDS(ON) ≦16.5mΩ@VGS=4.5V APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View e Ordering Information: ME7806S-G (Green product-Halogen free)

ME7806S-G General Description

The ME7806S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellul.

ME7806S-G Datasheet (1.10 MB)

Preview of ME7806S-G PDF

Datasheet Details

Part number:

ME7806S-G

Manufacturer:

Matsuki

File Size:

1.10 MB

Description:

N-channel mosfet.

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TAGS

ME7806S-G N-Channel MOSFET Matsuki

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