ME7806S-G Datasheet (Matsuki)

ME7806S-G, N-Channel MOSFET

The ME7806S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellul

ME7806S-G Features

* RDS(ON) ≦8.5mΩ@VGS=10V

* RDS(ON) ≦16.5mΩ@VGS=4.5V APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC PIN CONFIGURATION (DFN(S) 3.3x3.3) Top View e Ordering Information: ME7806S-G (Green product-Halogen free)