ME7809-G, ME7809 Datasheet - Matsuki

ME7809-G P-Channel MOSFET

The ME7809 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology . This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME7809-G Features

* RDS(ON)≦10mΩ@VGS=-10V

* RDS(ON)≦16mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System

* DC/DC Converter low side switc

ME7809-Matsuki.pdf

ME7809-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME7809-G, ME7809. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME7809-G, ME7809

Manufacturer:

Matsuki

File Size:

927.83 KB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME7809-G, ME7809.
Please refer to the document for exact specifications by model.

ME7809-G Distributor

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ME7809-G ME7809 P-Channel MOSFET Matsuki