ME7890ED-G Datasheet - Matsuki

ME7890ED-G N-Channel MOSFET

The ME7890ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME7890ED-G Features

* RDS(ON)≦4.6mΩ@VGS=10V

* RDS(ON)≦7.8mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Portable Equipment

* Battery Powered System

* DC/DC Converter

* Load Switch Orderi

ME7890ED-G Datasheet (951.64 KB)

ME7890ED-G Datasheet Preview — Preview of ME7890ED-G PDF

Datasheet Details

Part number:

ME7890ED-G

Manufacturer:

Matsuki

File Size:

951.64 KB

Description:

N-channel mosfet.

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ME7890ED-G N-Channel MOSFET Matsuki

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