ME7890ED-G, ME7890ED Datasheet - Matsuki

ME7890ED-G N-Channel MOSFET

The ME7890ED-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME7890ED-G Features

* RDS(ON)≦4.6mΩ@VGS=10V

* RDS(ON)≦7.8mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Portable Equipment

* Battery Powered System

* DC/DC Converter

* Load Switch Orderi

ME7890ED-Matsuki.pdf

ME7890ED-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME7890ED-G, ME7890ED. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME7890ED-G, ME7890ED

Manufacturer:

Matsuki

File Size:

951.64 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME7890ED-G, ME7890ED.
Please refer to the document for exact specifications by model.

ME7890ED-G Distributor

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ME7890ED-G ME7890ED N-Channel MOSFET Matsuki