ME80N75AF-G, ME80N75AF Datasheet - Matsuki

ME80N75AF-G N-Channel MOSFET

The ME80N75AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME80N75AF-G Features

* RDS(ON)≦10mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* Load Switch PIN CONFIGURATION (TO-220F) Top View

* The Ordering Informati

ME80N75AF-Matsuki.pdf

ME80N75AF-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME80N75AF-G, ME80N75AF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME80N75AF-G, ME80N75AF

Manufacturer:

Matsuki

File Size:

898.94 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME80N75AF-G, ME80N75AF.
Please refer to the document for exact specifications by model.

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ME80N75AF-G ME80N75AF N-Channel MOSFET Matsuki

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