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ME80N75AT-G, ME80N75AT N-Channel MOSFET

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Description

ME80N75AT / ME80N75AT-G N- Channel 75-V (D-S) MOSFET GENERAL .
The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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This datasheet PDF includes multiple part numbers: ME80N75AT-G, ME80N75AT. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
ME80N75AT-G, ME80N75AT
Manufacturer
Matsuki
File Size
696.78 KB
Datasheet
ME80N75AT-Matsuki.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME80N75AT-G, ME80N75AT.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦10.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management
* DC/DC Converter
* Load Switch (TO-220) Top View e Ordering Information: ME80N75AT (Pb-free) ME80N75AT-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Rating Unit Drain-Source Voltage VDS 75 V

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