ME95N03-G, ME95N03 Datasheet - Matsuki

ME95N03-G N-Channel MOSFET

The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME95N03-G Features

* RDS(ON)≦3.2mΩ@VGS=10V

* RDS(ON)≦4.2mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inver

ME95N03-Matsuki.pdf

ME95N03-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME95N03-G, ME95N03. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME95N03-G, ME95N03

Manufacturer:

Matsuki

File Size:

1.07 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME95N03-G, ME95N03.
Please refer to the document for exact specifications by model.

ME95N03-G Distributor

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ME95N03-G ME95N03 N-Channel MOSFET Matsuki