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ME95N03-G

N-Channel MOSFET

ME95N03-G Features

* RDS(ON)≦3.2mΩ@VGS=10V

* RDS(ON)≦4.2mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inver

ME95N03-G General Description

The ME95N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME95N03-G Datasheet (1.07 MB)

Preview of ME95N03-G PDF

Datasheet Details

Part number:

ME95N03-G

Manufacturer:

Matsuki

File Size:

1.07 MB

Description:

N-channel mosfet.

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TAGS

ME95N03-G N-Channel MOSFET Matsuki

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