ME95N04-G, ME95N04 Datasheet - Matsuki

ME95N04-G N-Channel MOSFET

The ME95N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME95N04-G Features

* RDS(ON)≦4.3mΩ@VGS=10V

* RDS(ON)≦5.7mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* NB/MB Vcore Low side switching

* Portable Equipment

ME95N04-Matsuki.pdf

ME95N04-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME95N04-G, ME95N04. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME95N04-G, ME95N04

Manufacturer:

Matsuki

File Size:

0.97 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME95N04-G, ME95N04.
Please refer to the document for exact specifications by model.

ME95N04-G Distributor

📁 Related Datasheet

ME95N04 N-Channel MOSFET (Matsuki)

ME95N03 N-Channel MOSFET (Matsuki)

ME95N03-G N-Channel MOSFET (Matsuki)

ME95N03T N-Channel MOSFET (Matsuki)

ME95N03T-G N-Channel MOSFET (Matsuki)

ME95N10F N-Channel MOSFET (Matsuki)

ME95N10F-G N-Channel MOSFET (Matsuki)

ME95N10T N-Channel MOSFET (Matsuki)

TAGS

ME95N04-G ME95N04 N-Channel MOSFET Matsuki