DS1270W Datasheet - Maxim Integrated

DS1270W 3.3V 16Mb Nonvolatile SRAM

A0 *A20 - Address Inputs DQ0 *DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3.3V) - Ground NC - No Connect DESCRIPTION The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 w.

DS1270W Features

* Five years minimum data retention in the absence of external power

* Data is automatically protected during power loss

* Unlimited write cycles

* Low-power CMOS operation

* Read and write access times of 100ns

* Lithium energy source is electrically disconnected to retain f

DS1270W Datasheet (188.24 KB)