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DS1270W 3.3V 16Mb Nonvolatile SRAM

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Description

19-5614; Rev 11/10 www.maxim-ic.com DS1270W 3.3V 16Mb Nonvolatile SRAM .
A0. A20 - Address Inputs DQ0. DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3.

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Features

* Five years minimum data retention in the absence of external power
* Data is automatically protected during power loss
* Unlimited write cycles
* Low-power CMOS operation
* Read and write access times of 100ns
* Lithium energy source is electrically disconnected to retain f

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