DS1270W
188.24kb
3.3v 16mb nonvolatile sram. A0*A20 - Address Inputs DQ0*DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+3
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DS1270AB - 16M Nonvolatile SRAM
(Maxim Integrated)
19-5615; Rev 11/10
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DS1270Y/AB 16M Nonvolatile SRAM
FEATURES
5 years minimum data retention in the
absence of external power Da.
DS1270Y - 16M Nonvolatile SRAM
(Maxim Integrated)
19-5615; Rev 11/10
.maxim-ic.
DS1270Y/AB 16M Nonvolatile SRAM
FEATURES
5 years minimum data retention in the
absence of external power Da.
DS1275 - Line-Powered RS-232 Transceiver Chip
(Dallas Semiconductor)
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DS1200 - Serial RAM
(Dallas Semiconducotr)
DS1200 Serial RAM Chip
.maxim-ic.
FEATURES
§ § § § § § § § § § § § § 1024 Bits of Read/Write Memory Low Data Retention Current for Battery Back.
DS1200-3 - AC-DC / Distributed Power Front-End 1U
(Emerson)
Embedded Power for Business-Critical Continuity
DS1200
1200 Watts
Distributed Power System
Distributed Power Bulk Front-End Total Output Power: 1200 .
DS1200-3-002 - AC-DC / Distributed Power Front-End 1U
(Emerson)
Embedded Power for Business-Critical Continuity
DS1200
1200 Watts
Distributed Power System
Distributed Power Bulk Front-End Total Output Power: 1200 .
DS1200-3-005 - AC-DC / Distributed Power Front-End 1U
(Emerson)
Embedded Power for Business-Critical Continuity
DS1200
1200 Watts
Distributed Power System
Distributed Power Bulk Front-End Total Output Power: 1200 .
DS120002D2 - SiC Schottky Barrier Diode
(Sanan)
Datasheet
1200V/2A
SiC Schottky Barrier Diode
Characteristic
Zero Reverse Recovery Current Positive temperature coefficient Temperature-independ.
DS120002D3 - SiC Schottky Barrier Diode
(Sanan)
Datasheet
SDS120J002D3
1200V/2A SiC Schottky Barrier Diode
Characteristic
➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.
DS120005D3 - SiC Schottky Barrier Diode
(Sanan)
Datasheet
SDS120J005D3
1200V/5A SiC Schottky Barrier Diode
Characteristic
➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.