DS1270Y Datasheet (Maxim Integrated)

DS1270Y, 16M Nonvolatile SRAM

A0 * A20 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground NC - No Connect DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words

DS1270Y Features

* 5 years minimum data retention in the absence of external power

* Data is automatically protected during power loss

* Unlimited write cycles

* Low-power CMOS operation

* Read and write access times of 70 ns

* Lithium energy source is electrically disconnected to retain fres