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DS1270Y - 16M Nonvolatile SRAM

DS1270Y Description

19-5615; Rev 11/10 www.maxim-ic.com DS1270Y/AB 16M Nonvolatile SRAM .
A0. A20 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) -.

DS1270Y Features

* 5 years minimum data retention in the absence of external power
* Data is automatically protected during power loss
* Unlimited write cycles
* Low-power CMOS operation
* Read and write access times of 70 ns
* Lithium energy source is electrically disconnected to retain fres

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16M Nonvolatile SRAM Maxim Integrated
Maxim Integrated DS1270Y-like datasheet