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DS1265Y - 8M Nonvolatile SRAM

DS1265Y Description

DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com .
A0 - A19 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+5V) - Ground - No Co.

DS1265Y Features

* 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electrically

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Nonvolatile SRAM Maxim Integrated Products
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