TN2501

N-Channel Vertical DMOS FET

Microchip

TN2501 Features

* Low Threshold

* High Input Impedance

* 110 pF Maximum Low-Input Capacitance

* Fast Switching Speeds

* Low On-Resistance

* Free from Secondary Breakdown

* Low Input and Output Leakage Applications

* Logic-Level Interfaces (Ideal for TT

TN2501 General Description

The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high i.

TN2501 Datasheet (949.65 KB)