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TN2106 Datasheet - Microchip

N-Channel Vertical DMOS FET

TN2106 Features

* Free from Secondary Breakdown

* Low Power Drive Requirement

* Ease of Paralleling

* Low CISS and Fast Switching Speeds

* Excellent Thermal Stability

* Integral Source-Drain Diode

* High Input Impedance and High Gain Applications

* Log

TN2106 General Description

The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur.

TN2106 Datasheet (811.02 KB)

Preview of TN2106 PDF

Datasheet Details

Part number:

TN2106

Manufacturer:

Microchip ↗

File Size:

811.02 KB

Description:

N-channel vertical dmos fet.

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TN2106 N-Channel Vertical DMOS FET Microchip

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