TN2106 - N-Channel Vertical DMOS FET
The TN2106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur
TN2106 Features
* Free from Secondary Breakdown
* Low Power Drive Requirement
* Ease of Paralleling
* Low CISS and Fast Switching Speeds
* Excellent Thermal Stability
* Integral Source-Drain Diode
* High Input Impedance and High Gain Applications
* Log
