TN2510

N-Channel Vertical DMOS FET

Microchip

TN2510 Features

* 2V Maximum Low Threshold

* High Input Impedance

* 125 pF Maximum Low Input Capacitance

* Fast Switching Speeds

* Low On-Resistance

* Free from Secondary Breakdown

* Low Input and Output Leakage Applications

* Logic-Level Interfaces (I

TN2510 General Description

The TN2510 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur.

TN2510 Datasheet (759.75 KB)