TN2130 Datasheet (Microchip) - N-Channel Vertical DMOS FET

TN2130, N-Channel Vertical DMOS FET

The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatu

TN2130 Features

* Free from Secondary Breakdown

* Low Power Drive Requirement

* Ease of Paralleling

* Low CISS and Fast Switching Speeds

* Excellent Thermal Stability

* Integral Source-Drain Diode

* High Input Impedance and High Gain Applications

* Log