TP0610T - P-Channel Vertical DMOS FET
The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos
TP0610T Features
* High Input Impedance and High Gain
* Low Power Drive Requirement
* Ease of Paralleling
* Low CISS and Fast Switching Speeds
* Excellent Thermal Stability
* Integral Source-Drain Diode
* Free from Secondary Breakdown Applications
* Log
