TP0610T Datasheet - Microchip

TP0610T P-Channel Vertical DMOS FET

The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos.

TP0610T Features

* High Input Impedance and High Gain

* Low Power Drive Requirement

* Ease of Paralleling

* Low CISS and Fast Switching Speeds

* Excellent Thermal Stability

* Integral Source-Drain Diode

* Free from Secondary Breakdown Applications

* Log

TP0610T-Microchip.pdf