MT28F160A3 Datasheet - Micron Technology

MT28F160A3 FLASH MEMORY

Table. See last page for mechanical drawing. MT28F160A3FD-11 TET accomplished by using high voltage which can be supplied on a separate line. The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieve.

MT28F160A3 Features

* MT28F160A3 Low Voltage, Extended Temperature

* Thirty-nine erase blocks: BALL ASSIGNMENT (Top View) Two 4K-word boot blocks (protected) Six 4K-word parameter blocks 46-Ball FBGA Thirty-one 32K-word main memory blocks

* VCC, VCCQ and VPP voltages: 1 2 3 4 5 6 7 8 2.7V

* 3.3V V

MT28F160A3_MicronTechnology.pdf