MT45W8MW16BGX Datasheet, Memory, Micron Technology

✔ MT45W8MW16BGX Features

Single device supports asynchronous, page, and burst operations
Vcc, VccQ Voltages 1.7V
1.95V Vcc 1.7V
1.95V VccQ
Random Access Time: 70ns
Burst Mode READ and WRI

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MT45W8MW16BGX

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Micron Technology

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📄 Datasheet

Description:

8meg x 16 async/page/burst cellularram memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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IC PSRAM 128MBIT PAR 54VFBGA

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MT45W8MW16BGX-856-AT

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MT45W8MW16BGX 8MEG Async Page Burst CellularRAM Memory Micron Technology