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MT45W2MW16B - (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory

MT45W2MW16B Description

www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM .
, and Figure 40 on page 50 for 54-ball mechanical drawing. Configuration: 4 Meg x 16 2 Meg x 16. Package 54-bal.

MT45W2MW16B Features

* Single device supports asynchronous, page, and burst operations
* VCC, VCCQ Voltages 1.70V
* 1.95V VCC 1.70V
* 2.25V VCCQ (Option W)
* Random Access Time: 70ns
* Burst Mode Write Access Continuous burst
* Burst Mode Read Access 4, 8, or 16 words,

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MT45W2MW16B MT45W4MW16B Burst Cellularram Memory Micron Semiconductor
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