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MT40A1G16 - 1.2V DDR4 SDRAM

Description

TwinDie™ 1.2V DDR4 SDRAM MT40A1G16

The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die; two x8s combined to make one x16.

Features

  • Uses two x8 8Gb Micron die to make one x16.
  • Single rank TwinDie.
  • VDD = VDDQ = 1.2V (1.14.
  • 1.26V).
  • 1.2V VDDQ-terminated I/O.
  • JEDEC-standard ball-out.
  • Low-profile package.
  • TC of 0°C to 95°C.
  • 0°C to 85°C: 8192 refresh cycles in 64ms.
  • 85°C to 95°C: 8192 refresh cycles in 32ms Options Marking.
  • Configuration.
  • 64 Meg x 16 x 16 banks x 1 rank 1G16.
  • 96-bal.

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Datasheet preview – MT40A1G16

Datasheet Details

Part number MT40A1G16
Manufacturer Micron
File Size 476.60 KB
Description 1.2V DDR4 SDRAM
Datasheet download datasheet MT40A1G16 Datasheet
Additional preview pages of the MT40A1G16 datasheet.

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Full PDF Text Transcription

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16Gb: x16 TwinDie Single Rank DDR4 SDRAM Description TwinDie™ 1.2V DDR4 SDRAM MT40A1G16 – 64 Meg x 16 x 16 Banks x 1 Ranks Description The 16Gb (TwinDie™) DDR4 SDRAM uses Micron’s 8Gb DDR4 SDRAM die; two x8s combined to make one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a BG1 control required for x8 addressing. Refer to Micron’s 8Gb DDR4 SDRAM data sheet (x8 option) for the specifications not included in this document. Specifications for base part number MT40A1G8 correlate to TwinDie manufacturing part number MT40A1G16. Features • Uses two x8 8Gb Micron die to make one x16 • Single rank TwinDie • VDD = VDDQ = 1.2V (1.14–1.26V) • 1.
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