* Features
* 533 MHz DDR operation (1.067 Gb/s/pin data rate)
* 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
* Organization
* 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36
* 8 internal banks for concurrent operation and maxi- mum bandwidth
* Redu
MT49H8M36
Micron Technology
5.48 MB
8 meg x 36 x 8 banks cio rldram 2.
CIO RLDRAM 2
MT49H32M9
* 32 Meg x 9 x 8 Banks MT49H16M18
* 16 Meg x 18 x 8 Banks MT49H8M36
* 8 Meg x 36 x 8 Banks
288Mb: x9, .
📁 Related Datasheet
MT49H8M32 1 Meg x 32 x 8 Banks Reduced Latency DRAM (Micron)
MT49H16M16 2 Meg x 16 x 8 Banks Reduced Latency DRAM (Micron)
MT49H16M18 16 Meg x 18 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H16M18C SIO RLDRAM 2 (Micron Technology)
MT49H16M36 576Mb CIO Reduced Latency (Micron)
MT49H32M18 576Mb CIO Reduced Latency (Micron)
MT49H32M9 32 Meg x 9 x 8 Banks CIO RLDRAM 2 (Micron Technology)
MT49H64M9 576Mb CIO Reduced Latency (Micron)
MT4914 Dual N-Channel Power MOSFET (MOS-TECH)
MT4936 N-Channel Power MOSFET (MOS-TECH)
