MT4LC16M4G3 DRAM

Micron Technology

Description

16 MEG x 4 EDO DRAM DRAM .
The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.

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Datasheet Specifications

Part number: MT4LC16M4G3
Manufacturer: Micron Technology
File Size: 386.19 KB
Datasheet: MT4LC16M4G3_MicronTechnology.pdf
Description: DRAM

Features

* Single +3.3V ±0.3V power supply
* Industry-standard x4 pinout, timing, functions, and packages
* 12 row, 12 column addresses (H9) or 13 row, 11 column addresses (G3)
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTL-comp

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MT4LC16M4G3 DRAM Micron Technology

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