MT4LC16M4H9, MT4LC16M4G3 Datasheet (Micron Technology)

MT4LC16M4H9, MT4LC16M4G3, DRAM

The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V.

The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations containing 4 bits each.

The 16,777,216 memory locations are arranged in

MT4LC16M4H9 Features

* Single +3.3V ±0.3V power supply

* Industry-standard x4 pinout, timing, functions, and packages

* 12 row, 12 column addresses (H9) or 13 row, 11 column addresses (G3)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTL-comp