MT4LC16M4H9
Micron Technology
386.19kb
Dram. The 16 Meg x 4 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from
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MT4LC16M4A7 - DRAM
(Micron Technology)
16 MEG x 4 FPM DRAM
DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions, and packages • 13 row, 11 colum.
MT4LC16M4G3 - DRAM
(Micron Technology)
16 MEG x 4 EDO DRAM
DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions, and packages • 12 row, 12 colum.
MT4LC16M4T8 - DRAM
(Micron Technology)
16 MEG x 4 FPM DRAM
DRAM
FEATURES
• Single +3.3V ±0.3V power supply • Industry-standard x4 pinout, timing, functions, and packages • 13 row, 11 colum.
MT4LC1M16C3 - 1 MEG x 16 FPM DRAM
(Micron)
1 MEG x 16 FPM DRAM
FPM DRAM
FEATURES
• JEDEC- and industry-standard x16 timing, functions, pinouts, and packages • High-performance, low-power CMOS .
MT4LC1M16E5 - EDO DRAM
(Micron Technology)
16Mb: 1 MEG x16 EDO DRAM
EDO DRAM
MT4C1M16E5 – 1 Meg x 16, 5V MT4LC1M16E5 – 1 Meg x 16, 3.3V
For the latest data sheet, please refer to the Micron W.
MT4LC2M8A1 - (MT4LC2M8A1/2) 2M x 8 DRAM
(Micron Technology)
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MT4LC2M8A2 - (MT4LC2M8A1/2) 2M x 8 DRAM
(Micron Technology)
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MT4LC2M8B1 - 2M x 8 FPM DRAM
(Micron Technology)
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MT4LC2M8B1 - (MT4LC2M8B1/2) 2M x 8 DRAM
(Micron Technology)
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MT4LC2M8B2 - (MT4LC2M8B1/2) 2M x 8 DRAM
(Micron Technology)
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