MT58L1MY18D Datasheet - Micron Technology

MT58L1MY18D (MT58xxxx) 16Mb SYNCBURST SRAM

The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 16Mb SyncBurst SRAMs integrate a 1 Meg x 18, 512K x 32, or 512K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. All synch.

MT58L1MY18D Features

* Fast clock and OE# access times

* Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)

* Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)

* SNOOZE MODE for reduced-power standby

* Common data inputs and data outputs

* Individual BYTE WRI

MT58L1MY18D_MicronTechnology.pdf