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MT58L1MY18D (MT58xxxx) 16Mb SYNCBURST SRAM

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Description

ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST™ SRAM .
The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.

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Datasheet Specifications

Part number
MT58L1MY18D
Manufacturer
Micron Technology
File Size
526.57 KB
Datasheet
MT58L1MY18D_MicronTechnology.pdf
Description
(MT58xxxx) 16Mb SYNCBURST SRAM

Features

* Fast clock and OE# access times
* Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD)
* Separate +3.3V or 2.5V isolated output buffer supply (VDDQ)
* SNOOZE MODE for reduced-power standby
* Common data inputs and data outputs
* Individual BYTE WRI

Applications

* Please refer to the Micron Web site (www. micronsemi. com/en/products/sram/) for the latest data sheet. TQFP PIN ASSIGNMENT TABLE PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 x32/x36 NC/DQPc1 DQc DQc VDDQ VSS NC DQc NC DQc DQb DQc DQb DQc VSS VDDQ DQb DQc DQb DQc NC VDD NC

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