2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Silicon NPN transistor, designed for VHF and UHF equipment.

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Datasheet Specifications

Part number: 2N4427
Manufacturer: Microsemi ↗ Corporation
File Size: 245.26 KB
Datasheet: 2N4427_MicrosemiCorporation.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Applications

* include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 U

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2N4427 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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