MWS11-GB11-xx Datasheet (Microsemi Corporation)

MWS11-GB11-xx, InGaP HBT Gain Block

C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD).

This RFIC amplifier was designed as an easily cascadable 50 ohm gain block.

The device is self-contained with 50 ohm input and output impedance.

Applications include IF and RF amplification in wireless/ wired voice and data communic