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MWS11-GB11-xx - InGaP HBT Gain Block

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Datasheet Details

Part number MWS11-GB11-xx
Manufacturer Microsemi Corporation
File Size 81.86 KB
Description InGaP HBT Gain Block
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C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW  This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz. This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V).
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