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MWS11-GB11-xx Datasheet - Microsemi Corporation

MWS11-GB11-xx InGaP HBT Gain Block

C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW   This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communic.

MWS11-GB11-xx Datasheet (81.86 KB)

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Datasheet Details

Part number:

MWS11-GB11-xx

Manufacturer:

Microsemi ↗ Corporation

File Size:

81.86 KB

Description:

Ingap hbt gain block.

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MWS11-GB11-xx InGaP HBT Gain Block Microsemi Corporation

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