2N1132L
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX
TO-39-
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IC PT Top, Tj
All Units
40 50 5.0 600 0.6 2.0 -65 to +200
Units
Vdc Vdc Vdc m Adc W W °C
@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 m W/0C for TA ≥ +250C 2) Derate linearly 11.4 m W/0C for TC ≥ +250C
2N1131, 2N1132 TO-5-
2N1311L, 2N1312L
- See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 m Adc Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µAdc Emitter-Base Cutoff Current IEBO VEB = 5.0 Vdc Collector-Emitter Cutoff Current ICER VCE = 50 Vdc, RBE ≤ 10 ohms Collector-Base Cutoff Current...
