2N2151
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Npn power transistors. These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with exc
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2N2150 - NPN POWER SILICON TRANSISTOR
(Microsemi Corporation)
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277 Devices 2N2150 2N2151 Qualified Level JANTX
MAXIMUM RATINGS (TC = 250C un.
2N2152 - PNP germanium power transistors
(Motorola)
2N2137 thru 2N2146 (continued)
INPUT & TRANSFER CHARACTERISTICS
BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT
All Types 1.2
VeE:::: 2V
1.0
~
o 2: 0.
2N2152 - (2N2152 - 2N2158) Geranium PNP Power Transistor
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N2153 - PNP germanium power transistors
(Motorola)
2N2137 thru 2N2146 (continued)
INPUT & TRANSFER CHARACTERISTICS
BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT
All Types 1.2
VeE:::: 2V
1.0
~
o 2: 0.
2N2153 - (2N2152 - 2N2158) Geranium PNP Power Transistor
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N2154 - PNP germanium power transistors
(Motorola)
2N2137 thru 2N2146 (continued)
INPUT & TRANSFER CHARACTERISTICS
BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT
All Types 1.2
VeE:::: 2V
1.0
~
o 2: 0.
2N2154 - (2N2152 - 2N2158) Geranium PNP Power Transistor
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N2156 - PNP germanium power transistors
(Motorola)
2N2137 thru 2N2146 (continued)
INPUT & TRANSFER CHARACTERISTICS
BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT
All Types 1.2
VeE:::: 2V
1.0
~
o 2: 0.
2N2156 - (2N2152 - 2N2158) Geranium PNP Power Transistor
(Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
.
2N2157 - PNP germanium power transistors
(Motorola)
2N2137 thru 2N2146 (continued)
INPUT & TRANSFER CHARACTERISTICS
BASE·EMITTER VOLTAGE versus COLLECTOR CURRENT
All Types 1.2
VeE:::: 2V
1.0
~
o 2: 0.