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2N5157 Datasheet - Microsemi

2N5157 NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linea.

2N5157-Microsemi.pdf

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Datasheet Details

Part number:

2N5157

Manufacturer:

Microsemi ↗

File Size:

54.92 KB

Description:

Npn high power silicon transistor.

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