Datasheet4U Logo Datasheet4U.com

2N5302 Datasheet - Microsemi

2N5302 NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2.

2N5302 Datasheet (56.54 KB)

Preview of 2N5302 PDF
2N5302 Datasheet Preview Page 2

Datasheet Details

Part number:

2N5302

Manufacturer:

Microsemi ↗

File Size:

56.54 KB

Description:

Npn high power silicon transistor.

📁 Related Datasheet

2N5301 POWER TRANSISTORS (ON Semiconductor)

2N5301 Bipolar NPN Device (Seme LAB)

2N5301 Silicon NPN Power Transistors (Inchange Semiconductor)

2N5301 NPN SILICON POWER TRANSISTOR (SSDI)

2N5301 Bipolar Transistor (Multicomp)

2N5301 Silicon NPN Transistor (NTE)

2N5301 N-CHANNEL JFET (Micross)

2N5301 SILICON NPN Transistor (Toshiba)

TAGS

2N5302 NPN HIGH POWER SILICON TRANSISTOR Microsemi

2N5302 Distributor