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2N5303, 2N5302 Datasheet - Microsemi

2N5303 NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 28.57 mW/0C for TA = +250C 2.

2N5302-Microsemi.pdf

This datasheet PDF includes multiple part numbers: 2N5303, 2N5302. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N5303, 2N5302

Manufacturer:

Microsemi ↗

File Size:

56.54 KB

Description:

Npn high power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N5303, 2N5302.
Please refer to the document for exact specifications by model.

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2N5303 2N5302 NPN HIGH POWER SILICON TRANSISTOR Microsemi

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