2N930 Datasheet (Microsemi) - NPN LOW POWER SILICON TRANSISTOR

2N930, NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices 2N930 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.0