LX5516 InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

Microsemi

Description

www.DataSheet4U.com TM ® LX5516 InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module P RODUCTION D AT A S HEET W WW .Microsemi .CO M .
The LX5516 is a power amplifier module optimized for WLAN applications in the 2.

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Datasheet Specifications

Part number: LX5516
Manufacturer: Microsemi ↗
File Size: 131.18 KB
Datasheet: LX5516_Microsemi.pdf
Description: InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module

Features

* Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current ~80mA Power Gain ~ 29 dB Pout=~+18dBm for 2.5% EVM, OFDM 64QAM/54Mbps Total Current ~130mA for Pout= +18dBm 50Ω Input/Output Matching On-chip Output Power Detector Small Footprint: 2x2mm2 Ultra Low Profile:0.46mm A

Applications

* in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCV

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LX5516 InGaP HBT 2.4 2.5 GHz Power Amplifier Module Microsemi

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